 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SFH636 HIGH SPEED 5.3 kV OPTOCOUPLER Preliminary Data Sheet FEATURES * High Speed Optocoupler without Base Connection * GaAlAs Emitter * Integrated Detector with Photodiode and Transistor * High Data Transmission Rate: 1 MBit/s * TTL Compatible * Open Collector Output * CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C: 19% * Good CTR Linearity Relative to Forward Current * Field Effect Stable by TRIOS(R) (TRansparent IOn Shield) * Low Coupling Capacitance * dV/dt: typ. 10 kV/ s * Isolation Test Voltage: 5300 VACRMS * VDE 0884 Available with Option 1 * UL Approval, File #E52744 APPLICATIONS * IGBT Drivers * Data Communications * Programmable Controllers Package Dimensions in Inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 NC 3 .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81) 4 Collector 2 1 Cathode 1 Anode 2 6 VCC 5 Emitter .335 (8.50) .343 (8.70) .039 (1.00) min. 4 typ. .018 (0.45) .022 (0.55) DESCRIPTION The SFH636 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photodetector consisting of a photodiode and a high speed transistor in a DIP-6 plastic package. The device is functionally similar to 6N136 except there is no base connection, and the electrical foot print is different. Noise and dv/dt performance is enhanced by not bringing out the base connection. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage............................................................................. 3 V DC Forward Current..................................................................25 mA Surge Forward Current ..................................................................1 A tp1 s, 300 pulses/sec. Total Power Dissipation............................................................ 45 mW Detector (Si Photodiode + Transistor) Supply Voltage................................................................. -0.5 to 30 V Output Voltage ................................................................. -0.5 to 20 V Output Current ............................................................................8 mA Total Power Dissipation.......................................................... 100 mW Package Insulation Isolation Test Voltage between emitter and detector (refer to climate DIN 40046, part 2, Nov. 74) ........... 5300 VACRMS Creepage........................................................................... 7 mm min. Clearance .......................................................................... 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ............................................ 175 Isolation Resistance VIO=500 V, TA=25C........................................................... 1012 VIO=500 V, TA=100C......................................................... 1011 Storage Temperature Range........................................ -55 to +150C Ambient Temperature Range....................................... -55 to +100C Junction Temperature ............................................................... 100C Soldering Temperature (t=10 sec. max.) ................................. 260C Dip soldering: distance to seating plane 1.5 mm 5-260 Characteristics (TA=0 to 70C, unless otherwise specified,typical values TA=25C) Description Emitter (IR GaAlAs) Forward Voltage, IF=16 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Photodiode + Transistor) Supply Current, Logic High IF=0, VO (open), VCC=15 V, TA=25C IF=0, VO (open), VCC=15 V Output Current, Output High IF=0, VO (open), VCC=5.5 V, TA=25C IF=0, VO (open), VCC=15 V, TA=25C IF=0, VO (open), VCC=15 V Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance Coupling Transfer Ratio IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C IF=16 mA, VO=0.5 V, VCC=4.5 V Collector Emitter Saturation Voltage IF=16 mA, IO=2.4 mA, VCC=4.5 V, TA=25C Supply Current, Logic Low IF=16 mA, VO open, VCC=15 V CC IC/IF 19 15 VOL ICCL 30 -- 0.1 0.4 V A 0.6 pF % ICCH 0.01 1 2 A .003 .01 -- CCE RthJA 3 300 0.5 1 50 pF K/W A VF IR C0 RthJA 1.5 0.5 125 700 1.8 10 V A pF K/W Symbol Min. Typ. Max. Unit IOH 80 Figure 1. Test set-up IF C=100 nF Figure 2. Switching time measurement Vout 1 100 6 5 4 C L=15pF Vcc 5V 2 Pulse generator Zo=50 tr,tf=5 ns Duty cycle=10% Period =100 s RL Vo 0 t IF 16 mA PHL 1.5V t t PLH 3 0 t SFH636 5-261 Description Propagation Delay Time (High-Low) IF=16 mA, VCC=5 V, RL=1.9 k, TA=25C Propagation Delay Time (Low-High) IF=16 mA, VCC=5 V, RL=1.9 k, TA=25C Symbol tPHL tPLH Min. Typ. 0.3 Max. 0.8 Unit s s 0.3 0.8 Figure 3. Common mode transient test C=100 nF 1 IF B VFF A 3 Pulse generator common mode Figure 4. Measurement waveform of CMR V Vcc RL CM 6 5 4 90% 2 10% 90% tR tF 10% Vo 0 Vo 5V A: IF=0 mA t 0 Vo t VOL 0 B: IF=16 mA t Description Common Mode Transient Immunity (High) IF=0, VCM=1500 VP-P, RL=1.9 k, VCC=5 V, TA=25C Common Mode Transient Immunity (Low) IF=16 mA, VCM=1500 VP-P, RL=1.9 k, VCC=5 V, TA=25C Symbol CMH CML Min. Typ. 10 Max. Unit kV/s 10 kV/s SFH636 5-262 |
Price & Availability of SFH636
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |